Corporate Profile Executive Team Governing Principles Strategic Partners Careers Contact Us

Services & Solutions

Overview Technology & Market Assessment Formulate IP Strategy Establish IP Position Leverage IP to Defend Business IP Monetization

Overview Automotive Clean Technologies Consumer Electronics Investment Community Legal Medical Devices Semiconductors Software

Overview Analytical Capabilities Enabling Technologies PatentVista Enterprise Professional Services Resources

Reports & Subscriptions

Open Market Reports Teardowns Investigative Analysis Device Library Sample Reports White Papers

Event Calendar News Room Insight Awards Blogs Videos

Samsung K9GAG08U0D

42nm NAND MLC Device

Samsung’s latest Multi-level cell (MLC) NAND Flash K9GAG08U0D features the most advanced Floating Gate based 42nm NAND Flash process from this manufacturer that Semiconductor Insights has analyzed to date.

Reports:

A process comparison of the interconnect Technologies of the latest DRAM and NAND Flash and Logic devices
Updated: 11/2009
CircuitVision Analysis on the Array and Peripherals of the Samsung K9GAG08U0D 42nm16Gbit MLC NAND Flash
Updated: 03/2009
CircuitVision Analysis on the HV Switches and Full Voltage Pump System of the Samsung K9GAG08U0D 42nm16Gbit MLC NAND Flash
Updated: 04/2009
Internal Waveform Analysis of the Page Buffer Related Signals on the Samsung K9GAG08U0D 42nm 16Gbit MLC NAND Flash
Updated: 04/2009
Internal Waveform Analysis on the Samsung K9GAG08U0D 42nm 16Gbit MLC NAND Flash
Updated: 04/2009
Memory Detailed Structural Analysis including Process Flow of the Samsung K9GAG08U0D 42nm 16Gbit MLC NAND Flash
Updated: 01/2009
Memory Detailed Structural Analysis of the Samsung K9GAG08U0D 42nm 16Gbit MLC NAND Flash
Updated: 01/2009
Multi-Temperature Transistor Characteristics of the Samsung K9GAG08U0D 42nm 16Gbit MLC NAND Flash
Updated: 03/2009

Related:

Request More Information

Register Now or Login to request more information.