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Texas Instruments OMAP4430
From the 4th generation of TI's OMAP family, the OMAP 4430 is one of the first devices to feature ARM’s Cortex A-9 MPCore multicore technology - making the OMAP 4 the ideal solution for those seeking high performance and low power consumption.
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Micron Technology
IMFT 25nm 8 GB NAND Flash
25nm process produces 8 gigabytes (GB) of storage in a single NAND device, creating a high-capacity storage solution for consumer gadgets.
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Micron Technology MT47H64M16HR-25E ES:H
50nm DDR2 U68A
Micron’s latest 50nm 1Gbit DDR2 SDRAM (MT47H64M16HR) features the most advanced Micron DRAM process technology
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Samsung K4B1G0846E
DDR3 SDRAM
This is the most advanced DDR3 available in the market and showcases the growing trend towards DDR3. With only 43mm2 of die area and three metal layers, it is widely expected that DDR3 SDRAM from Samsung will be the key product enabling a fast transition from DDR2 to DDR3 in 2009
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Intel Westmere Clarkdale C-2 CM80616004641AB
Intel's latest 32nm desktop CPU (codename “Clarkdale) is the first member of Westmere processor family. Built on Intel’s second-generation high-k and metal gate transistor technology, the equivalent oxide thickness of the high-k dielectric has been reduced from 1.0nm on 45nm to 0.9nm on the 32nm process while gate length as been reduced to 30nm.
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Hynix H5TQ1G83BFR
DDR3
Hynix’s latest 54nm 1Gbit DDR3 SDRAM (H5TQ1G83BFR) features 1Gbit of memory and has 48.7mm2 of chip size showing 8% overhead compared to the 54nm 1Gbit DDR2 SDRAM from this same manufacturer.
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Broadcom BCM4325GKWBG
IEEE 802.11a/b/g MAC/BASEBAND/RADIO w/
Bluetooth 2.1 + EDR AND FM Receiver
Broadcom's latest mobile connectivity solution,
BCM4325 features IEEE 802.11a/b/g
(MAC/Baseband/Radio), Bluetooth 2.1 +
enhanced data rate (EDR), and FM receiver
function, all in a single device. The WiFi feature
has two options: single-band 2.4-GHz 802.11b/g or
dual-band 2.4-GHz and 5-GHz 802.11a/b/g. This
highly integrated device addresses form factor
constraints of mobile and handheld devices by
using minimum external components, helping
OEMs to drive the cost down for mass production
and allow for flexibility in size, form, and function of
handheld devices.
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Toshiba TC58NVG4D2ETA00
43nm MLC NAND Flash Memory
This latest 43nm process node product features 16Gbit of non-volatile memory storage with 120mm2 of chip size. Compared to the Toshiba’s previous generation 56nm 16Gbit MLC NAND Flash product (TC58NVG4D1DTG00), this new device is 30% smaller in chip size. This efficient chip size of the 43nm 16Gbit MLC NAND Flash realizes a 2GBI single chip micro SD memory card
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Micron Technology MT29F32G08
34nm NAND Flash
IMFT’s latest multi-level cell (MLC) NAND Flash MT29F32G08CBAAA features the most advanced floating gate based 34nm NAND Flash process Semiconductor Insights has analyzed.
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Samsung K9GAG08U0D
42nm NAND MLC Device
Samsung’s latest Multi-level cell (MLC) NAND Flash K9GAG08U0D features the most advanced Floating Gate based 42nm NAND Flash process from this manufacturer that Semiconductor Insights has analyzed to date.
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