Toshiba TC58NVG3D4CTG00
70nm MLC NAND Flash
Samsung first introduced the 70nm process lithography in 2005, with Toshiba being the second to reach this goal. However, Samsung’s design used single-level cell (SLC) design. The implementation of Toshiba’s MLC technology allows for twice the density storage, reaching 8Gb (or 1GB), in a comparable form factor. MLC technology at 70nm is a remarkable achievement since there is less charge stored on the floating gate.
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