Freescale Semiconductor MR2A16ATS35C

Magnetoresistive random access memory (MRAM) is a relatively new tehnology where data is stored using magnetic storage elements, as opposed to electric charge traditionally used in other forms of memory. It combines the speed and durability of SRAM and has the potential for mass storage lke NVM. Using this technology, the device does not require a refresh at any time thus eliminating stand by power consumption, which results in long term retention of information even when the power is turned off. This device is a 256K x 16-bit 3.3-volt MRAM.