Intel PF48F6000M0Y0BE

Built on the success of the previous 90nm “Sibley” StrataFlash technology, Intel Corporation has released their next version of StrataFlash memory. This version uses Intel’s 65nm ETOX X (EPROM Tunnel Oxide) process technology. At 1Gb, the 65nm StrataFlash has a 19.1Mb/mm² rating, compared to the 512Mb 90nm StrataFlash with an 11.7Mb/mm² rating. Compared to the next most advanced device SI has seen, with a rating of 6.9Mb/mm², Intel has shown their aggressive design nature.