Samsung K4T51083QE

80nm Rev ''E'' DDR2 SDRAM

Despite reducing the wordline half pitch of 85nm, Samsung reaches an 80nm featured cell size through a number of innovations. The next generation of 3D access transistor facilitates this aggressive cell scaling. Samsung's newest trench channel FET is the Spherical-shaped Recessed Channel Array Transistor (S-RCAT). There are interesting new materials as well with germanium added to the cell plate and an advanced hafnium high-K dielectric stack in the cell capacitor.

Reports:

CircuitVision Analysis on the Array and Peripherals of the Samsung K4T51083QE 80nm 512M DDR2 SDRAM
Updated: 02/2008
CircuitVision Analysis on the Clocking and DLL of the Samsung K4T51083QE 80nm 512M DDR2 SDRAM
Updated: 02/2008
CircuitVision Analysis on the Data Path of the Samsung K4T51083QE 80nm 512Mb DDR2 SDRAM
Updated: 12/2007
CircuitVision Analysis on the Redundancy of the Samsung K4T51083QE 80nm 512M DDR2 SDRAM
Updated: 02/2008
Memory Detailed Structural Analysis with Options and Process Flow of the Samsung K4T51083QE 80nm 512Mb DDR2 SDRAM
Updated: 02/2007
Memory Detailed Structural Analysis with Options of the Samsung K4T51083QE 80nm 512Mb DDR2 SDRAM
Updated: 02/2007
Memory Quick Look of the Samsung K4T51083QE 80nm 512Mb DDR2 SDRAM
Updated: 07/2007
Structural Review of 2006/2007 State-of-the-Art Semiconductor Technologies (Micron (IMFT) 50nm NAND Flash, Toshiba 56nm NAND Flash, Intel 65nm Microprocessor, TI/Nokia 65nm Baseband Processor and Samsung 80nm DRAM)
Updated: 03/2007

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Samsung K4T51083QE

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