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Toshiba TC58NVG4D1DTG00

56nm MLC NAND Flash

Toshiba’s next generation of their multi-level cell (MLC) technology NAND Flash devices offers both an advanced process and highest single chip density. This is the highest density NAND Flash device that Semiconductor Insights has analyzed. The 56nm device was co-developed with SanDisk Corporation.

Reports:

A process comparison of the interconnect Technologies of the latest DRAM and NAND Flash and Logic devices
Updated: 11/2009
CircuitVision Analysis on the Full Chip of the Toshiba 56nm 16Gb TC58NVG4D1DTG00 MLC NAND Flash (Engineering Sample)
Updated: 05/2008
CircuitVision Analysis on the Full Data Path of the Toshiba TC58NVG4D1DTG00 56nm 16Gb MLC NAND Flash (Engineering Sample)
Updated: 05/2008
CircuitVision Analysis on the Full Voltage Generator System of the Toshiba TC58NVG4D1DTG00 56nm 16Gb MLC NAND Flash (Engineering Sample)
Updated: 05/2008
CircuitVision Analysis on the High Voltage Pump of the Toshiba TC58NVG4D1DTG00 56nm 16Gb MLC NAND Flash (Engineering Sample)
Updated: 05/2008
CircuitVision Analysis on the Memory Array and Peripherals of the Toshiba TC58NVG4D1DTG00 56nm 16Gb MLC NAND Flash (Engineering Sample)
Updated: 10/2007
CircuitVision Analysis on the Memory Array and Peripherals, HV Switches, and High Voltage Pump of the Toshiba TC58NVG4D1DTG00 56nm 16Gb MLC NAND Flash (Engineering Sample)
Updated: 11/2007
CircuitVision Analysis on the Memory Array, Voltage Generator, Data Path, Bad Block and Fail Bit Count Control, Power Bussing, and Logic Design Methodology on the Toshiba 56nm 16Gb TC58NVG4D1DTG00 MLC NAND Flash (Engineering Sample)
Updated: 01/2008
Custom Structural Analysis Comparing the Toshiba 56nm 8Gb and 16Gb MLC NAND Flash Devices (Engineering Sample)
Updated: 11/2007
Engineering Report including Layout Analysis on various Flash Memories
Updated: 05/2008
Internal Program and Erase Waveform Analysis on the Toshiba TC58NVG4D1DTG00 56nm 16Gb MLC NAND Flash (Engineering Sample)
Updated: 07/2008
Internal Waveform Analysis of the Toshiba TC58NVG4D1DTG00 56nm 16Gb MLC NAND Flash (Engineering Sample)
Updated: 03/2008
Internal Waveform Analysis with optional analysis of the Toshiba TC58NVG4D1DTG00 56nm 16Gb MLC NAND Flash (Engineering Sample)
Updated: 06/2008
Memory Detailed Structural Analysis of the Toshiba TC58NVG3D1DTGI0 56nm 8Gb MLC NAND Flash
Updated: 10/2007

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