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Hynix HY27UT088G2M-TPCB

60nm NAND Flash

Hynix HY27UT088G2M is an 8Gb MLC NAND Flash component developed in their 60 nm process technology, first introduced in their ''TIVA'' process for DRAM.

Reports:

CircuitVision Analysis of the Partial Address Path including Redundancy, I/O Circuitry and Voltage Switches on the Hynix HY27UT088G2M-TPCB 60nm 8G MLC NAND Flash
Updated: 08/2009
CircuitVision Analysis on the Memory Array and Peripherals of the Hynix HY27UT088G2M-TPCB 8Gb 60nm NAND Flash
Updated: 05/2008
Engineering Report including Layout Analysis on various Flash Memories
Updated: 05/2008
Engineering Report of the Internal Waveform analysis of the Program, Erase and Read Operations for the Hynix HY27UT088G2M-TPCB 60nm 8G NAND Flash
Updated: 06/2008
Engineering Report on the Hynix HY27UT088G2M-TPCB 60nm NAND Flash for Presence of Copper in Interconnect Dielectric
Updated: 09/2008
Engineering Report on the Internal Program and Erase Waveform Analysis on the Hynix HY27UT088G2M-TPCB 8Gb 60nm NAND Flash
Updated: 04/2008
Memory Detailed Structural Analysis of the Hynix HY27UT088G2M-TPCB 8Gb 60nm NAND Flash
Updated: 12/2007
Memory Quick Look of the Hynix HY27UT088G2M-TPCB 8Gb 60nm NAND Flash
Updated: 10/2007

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