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Toshiba TC58NVG4D2ETA10

43nm MLC NAND Flash

This latest 43nm process node product features 16Gbit of non-volatile memory storage with 120mm2 of chip size. Compared to the Toshiba’s previous generation 56nm 16Gbit MLC NAND Flash product (TC58NVG4D1DTG00), this new device is 30% smaller in chip size. This efficient chip size of the 43nm 16Gbit MLC NAND Flash realizes a 2GBI single chip micro SD memory card

Reports:

CircuitVision Analysis of the Array and Peripherals, Wordline Switches, High Voltage Switches and High Voltage Pumps on the Toshiba TC58NVG4D2ETA00 43nm 16Gbit MLC NAND Flash (Engineering Sample)
Updated: 12/2007
CircuitVision Analysis of the Memory Array and Peripherals on the Toshiba TC58NVG4D2ETA00 43nm 16Gbit MLC NAND Flash
Updated: 12/2008
Custom Structural Analysis including TEM/EELS analysis of the Toshiba TC58NVG4D2ETA10 43nm 16G MLC NAND Flash Tunnel Oxide
Updated: 11/2008
Memory Detailed Structural Analysis of the Toshiba TC58NVG4D2ETA10 16Gb 43nm MLC NAND Flash
Updated: 11/2008

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