Samsung K4T1G164QE-HCE6
DDR2 SDRAM
The 56nm process node device has 1Gbit of memory and achieved an impressive die area efficiency with 23.3Mbits per mm2.This is 3% more efficient than that of the Hynix 54nm 1Gbit DDR2 SDRAM. With only 3 layers of metal interconnect and the smallest 1Gbit DDR2 die size, this 1Gbit DDR2 SDRAM helps the manufacturer remain very competitive
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