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Hynix H5PS1G83EFR

DDR2 DRAM

This is the latest 1Gbit DDR2 SDRAM from the manufacturer using the 54nm DRAM process technology. Despite lack of 6F2 cell technology, the manufacturer has achieved an impressive die area efficiency of 22.7Mbits per mm2, which is very close to its archrival Samsung’s 23.3Mbies per mm2.

Reports:

A process comparison of the interconnect Technologies of the latest DRAM and NAND Flash and Logic devices
Updated: 11/2009
CircuitVision Analysis of the Full Chip of the Hynix H5PS1G83EFR 54nm 1Gb DDR2 SDRAM
Updated: 04/2009
CircuitVision Analysis on the Address Path of the Hynix H5PS1G83EFR 54nm 1Gb DDR2 SDRAM
Updated: 05/2009
CircuitVision Analysis on the Array and Peripheral of the Hynix H5PS1G83EFR 54nm 1Gb DDR2 SDRAM
Updated: 05/2009
CircuitVision Analysis on the Clocking and DLL of the Hynix H5PS1G83EFR 54nm 1Gb DDR2 SDRAM
Updated: 05/2009
CircuitVision Analysis on the Command, Control and Test Circuitry of the Hynix H5PS1G83EFR 54nm 1Gb DDR2 SDRAM
Updated: 05/2009
CircuitVision Analysis on the Data Path of the Hynix H5PS1G83EFR 54nm 1Gb DDR2 SDRAM
Updated: 05/2009
CircuitVision Analysis on the Internal Voltage Regulators of the Hynix H5PS1G83EFR 54nm 1Gb DDR2 SDRAM
Updated: 05/2009
CircuitVision Analysis on the VBB Pump and Regulator of the Hynix H5PS1G83EFR 54nm 1Gb DDR2 SDRAM
Updated: 05/2009
CircuitVision Analysis on the Voltage Generator System of the Hynix H5PS1G83EFR 54nm 1Gb DDR2 SDRAM
Updated: 05/2009
CircuitVision Analysis on the VPP Pump and Regulator of the Hynix H5PS1G83EFR 54nm 1Gb DDR2 SDRAM
Updated: 05/2009
CircuitVision of the Termination Control on the Hynix H5PS1G83EFR 54nm 1Gb DDR2 SDRAM
Updated: 08/2009
Memory Detailed Structural Analysis including Process Flow of the Hynix H5PS1G83EFR 54nm 1Gbit DDR2 SDRAM
Updated: 11/2009
Memory Detailed Structural Analysis on the Hynix H5PS1G83EFR 54nm 1Gb DDR2 SDRAM
Updated: 01/2009

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