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Samsung K9GAG08U0D

42nm NAND MLC Device

Samsung’s latest Multi-level cell (MLC) NAND Flash K9GAG08U0D features the most advanced Floating Gate based 42nm NAND Flash process from this manufacturer that Semiconductor Insights has analyzed to date.

Reports:

A process comparison of the interconnect Technologies of the latest DRAM and NAND Flash and Logic devices
Updated: 11/2009
CircuitVision Analysis on the Array and Peripherals of the Samsung K9GAG08U0D 42nm16Gbit MLC NAND Flash
Updated: 03/2009
CircuitVision Analysis on the HV Switches and Full Voltage Pump System of the Samsung K9GAG08U0D 42nm16Gbit MLC NAND Flash
Updated: 04/2009
Internal Waveform Analysis of the Page Buffer Related Signals on the Samsung K9GAG08U0D 42nm 16Gbit MLC NAND Flash
Updated: 04/2009
Internal Waveform Analysis on the Samsung K9GAG08U0D 42nm 16Gbit MLC NAND Flash
Updated: 04/2009
Memory Detailed Structural Analysis including Process Flow of the Samsung K9GAG08U0D 42nm 16Gbit MLC NAND Flash
Updated: 01/2009
Memory Detailed Structural Analysis of the Samsung K9GAG08U0D 42nm 16Gbit MLC NAND Flash
Updated: 01/2009
Multi-Temperature Transistor Characteristics of the Samsung K9GAG08U0D 42nm 16Gbit MLC NAND Flash
Updated: 03/2009

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