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Samsung K4B1G0846F
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Hitachi Ltd. HM62V16256C
SRAM
Hitachi reports that this 4M SRAM series is organized as 262,144-word x 16-bit. The series offers higher density and performance with low power consumption, thanks to its Hi-CMOS process technology. It also offers low standby power dissipation, making it suitable for battery backup systems. It is packaged in a standard 44-pin plastic TSOP II.
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Micron Technology
IMFT 25nm 8 GB NAND Flash
25nm process produces 8 gigabytes (GB) of storage in a single NAND device, creating a high-capacity storage solution for consumer gadgets.
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Micron Technology MT47H64M16HR-25E ES:H
50nm DDR2 U68A
Micron’s latest 50nm 1Gbit DDR2 SDRAM (MT47H64M16HR) features the most advanced Micron DRAM process technology
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Samsung K4B1G0846E
DDR3 SDRAM
This is the most advanced DDR3 available in the market and showcases the growing trend towards DDR3. With only 43mm2 of die area and three metal layers, it is widely expected that DDR3 SDRAM from Samsung will be the key product enabling a fast transition from DDR2 to DDR3 in 2009
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Toshiba T6L64 (SAN.5OS)
Column Driver
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Amoi Electronics Co. Ltd. E860
GSM Mobile Phone
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Huawei T2211
3G (TD-SCDMA) entry level mobile phone
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Motorola WX395
GSM 900/1800 Mobile Phone
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Samsung W799
3G Smartphone
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