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Micron Technology MT41J128M16HA-15E:D DDR3 SDRAM
Micron Technology MT29F32G08CBAAA 34nm MLC NAND
Micron Technology 42nm DDR3 SDRAM
Micron Technology IMFT 25nm 8 GB NAND Flash 25nm process produces 8 gigabytes (GB) of storage in a single NAND device, creating a high-capacity storage solution for consumer gadgets.
Micron Technology MT47H64M16HR-25E L:H 50nm DDR2 SDRAM
Micron Technology MT29F32G08EBAAAWP:D 3-bit-per-cell MLC NAND
Micron Technology MT28F128J3RG Q-Flash Memory
Micron Technology MT41J128M8JP-187E:F DDR3 SDRAM Manufactured with the vendor’s advanced 68nm DRAM process technology, this DDR3 device features the most efficient die size with 56.7mm2 compared with other vendors’ DDR3 from similar process nodes (Samsung’s 68nm and Hynix’s 66nm 1Gbit DDR3 SDRAM).
Micron Technology MT47H64M16HR-25E L:G 1Gbit DDR2 SDRAM