Open Market Reports

UBM TechInsights has amassed over 8000 'open market' reports that are available for resale. They include teardowns, quick looks, detailed structural analysis, circuit analysis, package construction analysis and process transistor characteristics, to name a few. Search for a report of interest by keywords, type, part number, manufacturer and other characteristics. View some sample reports here.


Memory Detailed Structural Analysis on the Hynix H27UAG8T2ATR 16Gbit 41nm NAND Flash Memory Detailed Structural Analysis \| 2009/09/30
CircuitVision Analysis of the Termination Control on the Micron MT41J128M8JP-187E:F 1Gb DDR3 SDRAM CircuitVision \| 2009/09/30
CircuitVision Analysis on the Full Chip of the Micron MT41J128M8JP-187E:F 68nm 1Gb DDR3 SDRAM CircuitVision \| 2009/09/30
CircuitVision Analysis on the Address Path of the Samsung K4B1G0846E 56nm 1Gb DDR3 SDRAM CircuitVision \| 2009/06/30
CircuitVision Analysis on the Data Path of the Samsung K4B1G0846E 56nm 1Gb DDR3 SDRAM CircuitVision \| 2009/06/30
Process Comparison on the latest 60nm and 50nm process DDR2 SDRAM devices from 3 major manufacturers: Samsung, Hynix, and Micron Process Comparision \| 2009/06/25
A Process Comparison of the Latest 50nm, 40nm, and 30nm MLC NAND Flash Devices from 4 Flash Manufacturers: Micron, Samsung Toshiba and Hynix Process Comparision \| 2009/05/28
Memory Detailed Structural Analysis including optional Fuse Analysis of the Hynix H27UAG8T2MTR 48nm 16Gb MLC NAND Flash Memory Detailed Structural Analysis \| 2009/08/31

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If you have a specific parameters or a complex search that you need assistance with, please contact Simone LeClaire at sleclaire@ubmtechinsights.com.