A Structural Analysis of the Toshiba TC58256DC-CT0501 256M NAND Flash

Our Structural Analysis Report is an in-depth investigation of the structures and fabrication process used in this NAND flash. It contains: a package and die overview (package x ray, die photo, SEM cross sections and analysis of the ball bonds); a layer-by-layer description of the device structure, from passivation to wells; detailed SEM cross-sectional analyses of all critical features, including flash cells, passivation, dielectrics, metallization, transistors, isolation and wells; and tables of critical vertical and horizontal dimensions. It also features: EDS analyses of metals and silicides; layer-by-layer topographic views of the flash cell layout; doping profiles by spreading resistance (SRP); and TEM cross-sectional imaging of the flash transistors (parallel to bitline).