Transistor Characteristics of the Xilinx XC5VLX50 Virtex-5 (UMC 65nm Process) FPGA

The UBM TechInsights Transistor Characteristics Report provides key DC electrical characteristics for two typical NMOS and two PMOS logic transistors in the periphery.

Our Transistor Characteristic Report includes:

Package and Die Overview
· Front and back package photos, package x-ray and die markings.
· Die floor plan, die size.
· Optical plan view of measured transistors.
· SEM topographical and cross-section views of the measured transistors.

Electrical measurements (measured at VDS voltage swings of 1.0 V, 1.2 V and 1.4 V)
· Transfer characteristics (ID vs. VGS)
· Output characteristics (ID vs. VDS)
· Body effect characteristics
· Substrate currents
· Punchthrough characteristics
· Breakdown voltage

The report includes transistor length, width, linear and saturation threshold voltages, drive current, sub-threshold swing, transconductance, saturation and leakage currents, substrate current, snapback voltage, and drain punchthrough voltage.

This report also includes 5 hours of analyst time.