Transistor Characteristics of the Matsushita 45nm UniPhier System LSI

Key DC electrical characteristics of four NMOS and four PMOS logic transistors at -20°C, room temperature (approximately 25°C) and 80°C in the core of the Matsushita 45nm UniPhier System LSI are presented in this report. The transfer characteristics (ID vs. VGS) and output characteristics (ID vs. VDS) are reported for voltage swings of 1.0 V, 1.2 V, and 1.4V for both NMOS and PMOS transistors. The gate leakage, breakdown voltages, and punchthrough characteristics are also reported for both NMOS and PMOS transistors. Electrical parameters including the linear and saturation threshold voltages, sub-threshold swing, transconductance, saturation and leakage currents, process gain factor, breakdown voltage, and drain punchthrough voltage are also provided. Plotted results include:

a) transfer and output characteristics and tabulated measurements of key performance benchmarks at the three temperatures
b) key performance benchmarks as a function of the three temperatures