Engineering Report including Layout Analysis on various Flash Memories

Hynix HYNIX 8G MLC NAND FLASH (57NM PROCESS NODE TECHNOLOGY) HY27UT088G2A-TPCB
IM Flash Technologies IM FLASH TECHNOLOGIES 16G MLC NAND FLASH MT29F16G08MAAWP:A
SpecTek SPECTEK 8G NAND FLASH MEMORY FBGL41B8GK3PG
Hynix HYNIX 8G 60NM NAND FLASH HY27UT088G2M-TPCB
Deutron Electronics Corp DEUTRON ELECTRONICS CORP 4G AG-AND FLASH P1U4GR30CT-G45CA
Samsung SAMSUNG 16G MLC NAND FLASH - 51NM PROCESS K9GAG08U0M-PCB0000
Samsung SAMSUNG 32G (8X4GB) NAND FLASH K9NBG08U5A-PCB0
Samsung SAMSUNG 16G NAND FLASH K9WAG08U1A
Hynix HYNIX 4G NAND FLASH HY27UF084G2M-TPCB
Hynix HYNIX 8G NAND FLASH SLC QUADRUPLE DIE (4 X 2GB) 1ST GENERATION HY27UH088G2M
Micron Technology MICRON TECHNOLOGY 4G 72NM NAND FLASH MT29F4G08AAAWP A
Samsung SAMSUNG 8G 65NM MLC NAND FLASH K9G8G08U0M
Samsung SAMSUNG 64G (8 x 8G) NAND FLASH K9MCG08U5M
Samsung SAMSUNG 4G NAND FLASH MEMORY K9K4G08U1M
Toshiba TOSHIBA 16G 56nm MLC NAND Flash TC58NVG4D1DTG00



Includes package photographs (Top & Bottom), package X-rays, die images, annoated die maps. The analysis includeds the identification of row access decoders and switches, bitline & wordline orientation, charge pumps and voltage generation systems, page buffers, input/output buffers, Flash array floorplan, die measurements, architecture information (planes, blocks etc.)