Multi-temperature I/O Transistor Characteristics of the Intel 45nm Atom Processor

The UBM TechInsights Transistor Characteristics Report provides key DC electrical characteristics for two NMOS I/O transistors and two PMOS I/O transistors in the I/O region of the Intel Atom processor.


Our Transistor Characteristic Report includes:

Package and Die Overview
· Front and back package photos, package x-ray and die markings.
· Die floor plan, die size.
· SEM topographical and cross-section views of the measured transistors.

Electrical measurements
· Transfer characteristics (ID vs. VGS)
· Output characteristics (ID vs. VDS)
· Body effect characteristics
· Gate leakage
· Punchthrough characteristics

The report includes transistor length, width, linear and saturation threshold voltages, drive current, sub-threshold swing, transconductance, saturation and leakage currents, gate leakage current and drain punchthrough voltage.