CircuitVision Analysis of the Array and Peripherals, Wordline Switches, High Voltage Switches and High Voltage Pumps on the Toshiba TC58NVG4D2ETA00 43nm 16Gbit MLC NAND Flash (Engineering Sample)

This circuit analysis for Toshiba TC58NVG4D2ETA00 43nm 16Gbit MLC NAND Flash include Array & Peripherals, Word line High Voltage Switches and High Voltage Pumps.

The circuit analysis on Array & Peripherals covers Bussing Layout Diagram and annotated topographical images of memory array peripheral, and page buffers circuitry, Memory Array Diagram (array structure for one repetitive array block), Row Decoders and Word line Switches (for both the global and local word lines), Page Buffers and related circuitry including the bit line access Both the upper and lower half of the Page Buffer block will be analyzed based on the ABL (All Bit line) architecture.

For the circuit analysis on word line High Voltage Switches include the switch the programming, pass, and cut-off voltages onto the word line. The final decoders that control these circuits will also be included.

For the circuit analysis on High Voltage Pumps , it include the program and pass, cut-off voltage charge pump generator systems. Each voltage system includes the charge pump, clock generator, and level detector, the document covers annotated topographical images of the Charge Pump Circuitry and word line High Voltage Switches