Internal Waveform Analysis on the Samsung K9GAG08U0D 42nm 16Gbit MLC NAND Flash

The probing analysis on the Samsung K9GAG08U0D 42nm 16Gb MLC NAND Flash will provide details of the programming algorithm and on the internal voltages required to program, read, and erase the memory cells at the four ranges between reference threshold voltages. The probing analysis tests the flash in an active probe arrangement and voltage traces of the signals are recorded during program, read, and erase operations. UBM TechInsights will first need to extract portions of the data and address path to determine where to position the probe points.

This report contains:


1. Waveforms of the Program/Verify operation on signals: GWL_sel, BL_sel, GGSL, GSSL, DGWL1, & DGWL2.



· Program all ”11”

· Program all “01”

· Program all “10”

· Program all “00”

· Program random data


2. Waveforms of the Read operation on signals: GWL_sel, BL_sel, GGSL, GSSL, DGWL1, & DGWL2



· Programmed states: “11”, “10”, “01” and “00”





3. Waveforms of the Erase operation on signals: GWL_sel, BL_sel, GGSL, GSSL, DGWL1, DGWL2, SL & PWELL

· Programmed Block

· Erased state Block





The Program/verify, Read, and Erase analysis will include waveforms of the two dummy wordlines (DGWL1 & DGWL2) at both edges of the NAND string, that are adjacent of each select transistor (SSL/GSL).



4. Also included in the analysis:

· A table of voltage potential ranges for program, read and erase operations

· Analysis of results