Multi-Temperature Transistor Characteristics of the Samsung K9GAG08U0D 42nm 16Gbit MLC NAND Flash

SI will provide an analysis of the electrical properties of the standard logic CMOS device transistors (two NMOS and PMOS transistors) including
a) Plotted transfer and output characteristics and tabulated measurements of key performance benchmarks at room temperature (approximately 25°C)
b) Plotted key performance benchmarks as a function of the three temperatures.

Specific DC Analysis Benchmarks of two NMOS and two PMOS transistors will include:
- Threshold voltage (linear and saturated) as a function of temperature
- Drive Current (IDSAT) as a function of temperature
- Leakage current (both gate and channel) as a function of temperature
- Sub-threshold slope as a function of temperature
- Transconductance as a function of temperature
- Punch-through voltage as a function of temperature
- Body effect
- Process gain factor
- IDS vs. VGS plot
- IDS vs. VDS plot

Supporting cross sections and imaging will include:
- SEM cross section of minimum NMOS and PMOS transistors (actual gate lengths confirmed post-test)
- Optical and SEM images of transistor layouts