Multi-Temperature Transistor Characteristics of the Micron (IMFT) MT29F32G08 34nm, 32Gbit MLC NAND Flash

This is the analysis for Multi-Temperature Transistor Characteristics on Micron (IMFT) MT29F32G0 34nm Gbit MLC NAND Flash. The analysis provide the electrical properties of the standard logic CMOS device transistors (two NMOS and PMOS transistors) including plotted transfer and output characteristics and tabulated measurements of key performance benchmarks at –20°C, room temperature (approximately 25°C) and 80°C Specific DC Analysis of two NMOS and two PMOS transistors include as follows:

- Threshold voltage (linear and saturated) as a function of temperature
- Drive Current (IDSAT) as a function of temperature
- Leakage current (both gate and channel) as a function of temperature
- Sub-threshold slope as a function of temperature
- Transconductance as a function of temperature
- Punch-through voltage (at 80ºC only)
- Body effect
- Process gain factor
- IDS vs. VGS plot
- IDS vs. VDS plot

Supporting cross sections and imaging include as follows:

- SEM cross section of minimum NMOS and PMOS transistors (actual gate lengths confirmed post-test)
- Optical and SEM images of transistor layouts